Strain-induced pseudomagnetic field in the Dirac semimetal borophene

Strain-induced pseudomagnetic field for novel graphene electronics.

Particular strain geometry in graphene could lead to a uniform pseudomagnetic field of order 10T and might open up interesting applications in graphene nanoelectronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100 nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elast...

Triplet Fermions and Dirac Fermions in Borophene

Borophene is a monolayer materials made of boron. A perfect planar boropehene called β12 borophene has Dirac cones and they are well reproduced by a tight-binding model according to recent experimental and first-principles calculation results. We explicitly derive a Dirac theory for them. Dirac cones are gapless when the inversion symmetry exists, while they are gapped when it is broken. In add...

Dirac semimetal in three dimensions.

We show that the pseudorelativistic physics of graphene near the Fermi level can be extended to three dimensional (3D) materials. Unlike in phase transitions from inversion symmetric topological to normal insulators, we show that particular space groups also allow 3D Dirac points as symmetry protected degeneracies. We provide criteria necessary to identify these groups and, as an example, prese...

Terahertz-induced acceleration of massive Dirac electrons in semimetal bismuth

Dirac-like electrons in solid state have been of great interest since they exhibit many peculiar physical behaviors analogous to relativistic mechanics. Among them, carriers in graphene and surface states of topological insulators are known to behave as massless Dirac fermions with a conical band structure in the two-dimensional momentum space, whereas electrons in semimetal bismuth (Bi) are ex...

Pseudomagnetic fields and triaxial strain in graphene